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rf & protection devices data sheet revision 3.2, 2010-06-30 BGB707L7ESD sige:c wideband mmic lna with integrat ed esd protection
edition 2010-06-30 published by infineon technologies ag 81726 munich, germany ? 2010 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BGB707L7ESD data sheet 3 revision 3.2, 2010-06-30 trademarks of infineon technologies ag bluemoon?, comneon?, c166 ?, crossave?, canpak?, cipos? , coolmos?, coolset?, corecontrol?, dave?, easypim?, econobridg e?, econodual?, eco nopack?, econopim?, eicedriver?, eupec?, fcos?, hitfet?, hybridpack?, isofac e?, i2rf?, isopack?, mipaq?, modstack?, my-d?, novalithic?, omnitune?, optimos?, origa?, profet?, pro-sil?, primarion?, primepack?, rasi c?, reversave?, satric?, sens onor?, sieget ?, sindrion?, smarti?, smartlewis?, tempfet? , thinq!?, tricore?, trenchstop?, x-go ld?, xmm?, x-pmu?, xposys?. other trademarks advance design system? (ads) of agilent tech nologies, amba?, arm?, mu lti-ice?, primecell?, realview?, thumb? of arm limited, uk. autosar? is licensed by autosar development partnership. bluetooth? of bluetooth sig inc. cat-iq? of dect forum. colossus? , firstgps? of trimble navigation ltd. emv? of emvco, llc (visa holdings inc.). ep cos? of epcos ag. flexgo? of microsoft corporation. flexray? is licensed by flexra y consortium. hyperterminal? of hilgraeve incorpor ated. iec? of commission electrotechnique internationale. irda? of infrared data association corporation. iso? of international organization for standardizati on. matlab? of mathworks, inc. maxim? of maxim integrated products, inc. mi crotec?, nucleus? of mentor graphi cs corporation. mifare? of nxp. mipi? of mipi alliance, inc. mips? of mips technologies, inc., usa. murata? of murata manufacturing co., microwave office? (mwo) of applied wave research inc., omnivision? of omnivision technologies, inc. openwave? openwave systems inc. red hat? red hat, inc. rfmd? rf micro devices, inc. sirius? of si rius sattelite radio inc. solaris? of sun microsystems, inc. spansion? of spansion llc ltd. symbian? of symbian software limited. taiyo yuden? of taiyo yuden co. teaklite? of ceva, inc. tektro nix? of tektronix inc. toko? of toko kabushiki kaisha ta. unix? of x/open company limited. verilo g?, palladium? of cadence design systems, inc. vlynq? of texas instruments incorpor ated. vxworks?, wind river? of wind ri ver systems, inc. zetex? of diodes zetex limited. last trademarks update 2010-03-22 BGB707L7ESD sige:c wideband mmic lna with integrated esd protection revision history: 2010-06-30, revision 3.2 previous revision: revision 3.1 page subjects (major cha nges since last revision) new template for data sheet layout. 18 - 26 linearity description related to the rf output. 13 , 14 typical dc characteristic curves included. 27 , 30 typical ac characteristic curves included. 21 , 24 ac performance tables expanded by 2 frequencies.
BGB707L7ESD table of contents data sheet 4 revision 3.2, 2010-06-30 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 list of figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 list of tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2product brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 operation conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6.1 dc characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6.2 typical dc characteristic curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6.3 ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6.3.1 ac characteristics in fm radio applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6.3.1.1 high-ohmic fm radio antenna . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6.3.1.2 50 ? fm radio antenna . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6.3.2 ac characteristics in the sdmb application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6.3.3 ac characteristics in test fixture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.3.4 typical ac characteristic curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 7 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 table of contents
BGB707L7ESD list of figures data sheet 5 revision 3.2, 2010-06-30 figure 1 pinning pg-tslp-7-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 figure 2 function block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 figure 3 total power dissipation p tot = f ( t s ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 figure 4 i cc as a function of r ext , v cc as parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 5 i cc as a function of v cc , v ctrl =3v , r ext as parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 6 i cc as a function of v ctrl , v cc =3v , r ext as parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 7 i cc as a function of temperature , v ctrl = v cc =3v , r ext = open . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 8 testing circuit for frequencies from 150 mhz to 10 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 figure 9 s 11 as a function of frequency, i c as parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 figure 10 s 22 as a function of frequency, i c as parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 figure 11 transition freque ncy as a function of i c , v c as parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 figure 12 optimum source impedance for minimum nf as a function of frequency, i c as parameter. . . . 28 figure 13 maximum power gain as a function of i c , frequency as parameter . . . . . . . . . . . . . . . . . . . . . . 29 figure 14 power gain as a function of i c , frequency as parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 figure 15 power gain and total supply cu rrent as a function of rf input power at 3.5 ghz . . . . . . . . . . . 30 figure 16 output 3 rd order intercept point as a function of i c at 3.5 ghz, v c as parameter . . . . . . . . . . . . 30 figure 17 package outline tslp-7-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 figure 18 footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 figure 19 marking layout (top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 figure 20 tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 list of figures
BGB707L7ESD list of tables data sheet 6 revision 3.2, 2010-06-30 table 1 pinning table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 table 2 maximum ratings at t a = 25c (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 3 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 4 operation conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 table 5 dc characteristics at v cc =3v, t a = 25c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 table 6 ac characteristics in the fm radio application as described in an177 . . . . . . . . . . . . . . . . . . . . 15 table 7 ac characteristics in the fm radio application as described in an181 . . . . . . . . . . . . . . . . . . . 15 table 8 ac characteristics in the sdmb application as described in tr122, t a = 25c . . . . . . . . . . . . . 16 table 9 ac characteristics v c =3v, f = 150 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 table 10 ac characteristics v c =3v, f = 450 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 table 11 ac characteristics v c =3v, f = 900 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 table 12 ac characteristics v c =3v, f = 1.5 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 table 13 ac characteristics v c =3v, f = 1.9 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 table 14 ac characteristics v c =3v, f = 2.4 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 table 15 ac characteristics v c =3v, f = 3.5 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 table 16 ac characteristics v c =3v, f = 5.5 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 table 17 ac characteristics v c =3v, f = 10 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 list of tables
product name package marking BGB707L7ESD tslp-7-1 az sige:c wideband mmic lna with integrated esd protection BGB707L7ESD data sheet 7 revision 3.2, 2010-06-30 1 features ? high performance general purpose wideband mmic lna ? esd protection integrated for all pins (3 kv for rf input vs. gnd, 2 kv for all other pin combinations, hbm) ? integrated active biasing circui t enables stable operation point against temperature- and processing-variations ? excellent noise figure from infineons reliable high volume sige:c technology ? high gain and linearity at low current consumption ? operation voltage: 1.8 v to 4.0 v ? adjustable operation current 2.1 ma to 25 ma by external resistor ? power-off function ? very small and leadless package tslp-7-1, 2.0 x 1.3 x 0.4 mm 3 ? pb-free (rohs complia nt) and halogen-free (w eee compliant) package applications as low noise amplifier (lna) in ? mobile, portable and fixed connectivity applicatio ns: wlan 802.11a/b/g/n, wimax 2.5/3.5/5 ghz, uwb, wifi, bluetooth ? satellite communication systems: navigation systems (gps, glona ss), satellite radio (sdars, dab) and c-band lnb ? multimedia applications such as mobile/portable tv, catv, fm radio ? 3g/4g umts/lte mobile phone applications ? ism applications like rke, amr and zigbee, as well as for emerging wireless applications attention: esd (electrostatic discharge) sensitive device, observe handling precautions
BGB707L7ESD product brief data sheet 8 revision 3.2, 2010-06-30 2 product brief the BGB707L7ESD is a silicon germanium carbon (sig e:c) low noise amplifie r mmic with integrated esd protection and active biasing. the device is as flexible as a discrete transistor and features high gain, reduced power consumption and very low distortion for a very wide range of applications. the device is based upon infineon technologies cost effective sige:c technology and comes in a low profile tslp-7-1 leadless green package figure 1 pinning pg-tslp-7-1 table 1 pinning table pin name function 1 v cc supply voltage 2 v bias bias reference voltage 3 rf in rf input 4 rf out rf output 5 v ctrl on/off control voltage 6 adj current adjustment pin 7 gnd dc/rf gnd 1 2 3 6 5 4 7
BGB707L7ESD product brief data sheet 9 revision 3.2, 2010-06-30 the following function block in figure 2 shows the principal schematic how th e BGB707L7ESD is used in a circuit. the power on/off function is controlled by applying v ctrl . by using an external resistor r ext the pre-set current of 2.1 ma (which is adjusted by the integrated biasing when r ext is omitted) can be increased. base- and collector voltages are applied to the respective pins rf in and rf out by external inductors l b and l c . figure 2 function block %*%/(6'ixqfwlrqeorfn %,$6 &,5&8,7 '& 9 && '& 9 fwuo 5) lq 5) rxw 9 && 9 &wuo 9 eldv $gm rqsdfndjhedfnvlgh *1' & lq & rxw / & / % 5 h[w ,q 2xw , &wuo , && %*%/(6'
BGB707L7ESD maximum ratings data sheet 10 revision 3.2, 2010-06-30 3 maximum ratings attention: stresses above the max. values listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. table 2 maximum ratings at t a = 25c (unless otherwise specified) parameter symbol values unit note / test condition min. typ. max. supply voltage v cc ??4.0v? t a = -55c ? ? 3.5 ? supply current at v cc pin i cc ??25ma? dc current at rf in pin i b ??2ma? voltage at ctrl on/off pin v ctrl ??4.0v? total power dissipation t s <112 c 1) 1) t s is the soldering point temperature. t s is measured at the gnd pin (7) at the soldering point to the pcb p tot ??100mw? operation junction temperature t jop ??150c? storage temperature t stg -55 ? 150 c ?
BGB707L7ESD thermal characteristics data sheet 11 revision 3.2, 2010-06-30 4 thermal characteristics figure 3 total power dissipation p tot = f ( t s ) table 3 thermal resistance parameter symbol values unit note / test condition min. typ. max. junction - soldering point 1) 1) for calculation of r thja please refer to application note thermal resistance r thjs ? 375 ? k/w ? 0 20 40 60 80 100 120 0 50 100 150 ts [c] ptot [mw]
BGB707L7ESD operation conditions data sheet 12 revision 3.2, 2010-06-30 5 operation conditions 6 electrical characteristics 6.1 dc characteristics table 4 operation conditions parameter symbol values unit note / test condition min. typ. max. supply voltage v cc 1.83.04.0v? voltage ctrl on/off pin in on mode v ctrl 1.2 ? v cc v? voltage ctrl on/off pin in off mode v ctrl -0.3 ? 0.3 v ? table 5 dc characteristics at v cc =3v, t a = 25c parameter symbol values unit note / test condition min. typ. max. supply current i cc ???ma v ctrl = 3 v 1.6 2.1 2.6 r ext =open ?3? r ext =12 k ? ?4.2? r ext = 4.7 k ? ?6? r ext = 2.4 k ? ?10? r ext =1k ? supply current in off mode i cc-off ??6 a v ctrl = 0 v current into v ctrl pin in on mode i ctrl-on ?1420 a v ctrl = 3 v current into v ctrl pin in off mode i ctrl-off ??0.1 a v ctrl = 0 v
BGB707L7ESD electrical characteristics data sheet 13 revision 3.2, 2010-06-30 6.2 typical dc char acteristic curves the measurement setup is an application circuit according to figure 2 using the integrated biasing. t a = 25 c unless otherwise specified. figure 4 i cc as a function of r ext , v cc as parameter figure 5 i cc as a function of v cc , v ctrl =3v , r ext as parameter 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 10 100 1000 10000 100000 rext [ohm] icc [ma] 1- vcc / vctrl = 3v 2- vcc / vctrl = 1.8v 3- vcc / vctrl = 4v 3 1 2 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0.00.51.01.52.02.53.03.54.0 vcc [v] icc [ma] rext = 1 k ? rext = 2.4 k ? rext = 12 k ? rext = open rext = 4.7 k ?
BGB707L7ESD electrical characteristics data sheet 14 revision 3.2, 2010-06-30 figure 6 i cc as a function of v ctrl , v cc =3v , r ext as parameter figure 7 i cc as a function of temperature , v ctrl = v cc =3v , r ext = open 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 vctrl [v] icc [ma] rext=1k ? rext= 2.4k ? rext= open rext= 4.7k ? rext= 12k ? 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 -50-30-101030507090110130150 temperature [c] icc [ma]
BGB707L7ESD electrical characteristics data sheet 15 revision 3.2, 2010-06-30 6.3 ac characteristics ac characteristics are described in two sub-chapters, fi rst for 100 mhz fm radio applications, then for higher frequencies in a 50 ? environment. 6.3.1 ac characteristics in fm radio applications two BGB707L7ESD fm radio application notes are available on our website www.infineon.com/bgb707 . depending on the impedance of the used antenna, please consult an177 for high-ohmic antennas and an181 for 50 ? antennas. in this chapter you find a summary of the el ectrical performance as described in these application notes in table form. 6.3.1.1 high-ohmic fm radio antenna ta = 25c, v cc =3.0v, i cc =3.0ma, v ctrl =3.0v, f = 100 mhz, r ext =12 k ? 6.3.1.2 50 ? fm radio antenna ta = 25c, v cc =2.8v, i cc =4.2ma, v ctrl =2.8v, f = 100 mhz, r ext = 4.7 k ? table 6 ac characteristics in the fm radi o application as described in an177 parameter symbol values unit note / test condition min. typ. max. transducer gain | s 21 |2 ? 12 ? db ? input return loss rl in ?0.5 1) 1) lna presents a high input impedance match over the 76-108 mhz fm radio band. ?db? output return loss rl out ?16?db? noise figure (z s = 50 ? ) nf ?1.0?db? input 1 db gain compression point 2) 2) i cc increases as rf input power level approaches ip 1db . ip 1db ?-5.5?dbm? input 3 rd order intercept point 3) 3) iip 3 value depends on termination of all intermodulation frequency components. termination used for the measurement is 50 ? from 0.1 to 6 ghz. iip 3 ?-12.5?dbm? table 7 ac characteristics in the fm radi o application as described in an181 parameter symbol values unit note / test condition min. typ. max. transducer gain |s 21 |2 13.5 15 16.5 db ? input return loss rl in ?7.5?db? output return loss rl out ? 14.5 ? db ? noise figure (z s = 50 ? ) nf ? 1.35 1.9 db ? input 1 db gain compression point 1) 2) 1) i cc increases as rf input power level approaches ip 1db . ip 1db ?-10?dbm? input 3 rd order intercept point 2)3) 2) verified by random sampling 3) iip 3 value depends on termination of all intermodulation frequency components. termination used for the measurement is 50 ? from 0.1 to 6 ghz. iip 3 -7.5 -6 ? dbm ?
BGB707L7ESD electrical characteristics data sheet 16 revision 3.2, 2010-06-30 6.3.2 ac characteristics in the sdmb application a technical report tr122 for lna applic ations in the frequency range 2.3 ghz to 2.7 ghz is available on our web page www.infineon.com/bgb707 . in this chapter you find a summary of the electrical performance for the sdmb application as described in technical report tr122 in table form. table 8 ac characteristics in the sdmb application as described in tr122, t a = 25c parameter symbol values unit note / test condition min. typ. max. frequency range freq ? 2.6 ? ghz ? supply voltage v cc ?2.8?v? bias current i cc 4.4 5.6 6.8 ma ? transducer gain | s 21 |2 13 15 17 db power @ port1 = -30 dbm transducer gain (off mode) | s 21 | 2 off ? -18 ? db ? noise figure (z s = 50 ? ) nf ? 1.15 1.5 db including 0.1 db board losses input return loss rl in ? 13.2 ? db ? output return loss rl out ?12?db? reverse isolation i rev ? 27.8 ? db power @ port2 = -10 dbm input p1db ip 1db ?-9.6?dbm? output p1db op 1db ?4.4?dbm? input ip3 iip 3 ? -1.4 ? dbm input power = -30 dbm output ip3 oip 3 ? 13.6 ? dbm ? on switching time t on ?1.5? s measured with c 2 = 1 nf off switching time t off ?4.2? s? stability k ? >1 ? stability measured up to 10 ghz
BGB707L7ESD electrical characteristics data sheet 17 revision 3.2, 2010-06-30 6.3.3 ac characteristics in test fixture for frequencies from 150 mhz to 10 ghz the measurem ent setup is a test fixtur e with bias-t?s in a 50 ? system according to figure 8 at v c =3v , t a = 25 c. the collector current i c is controlled by an external base voltage v b applied at rf in pin and not by the integrated biasings reference voltage v bias . v c controls the collector voltage at rf out pin. this allows direct measurement of the amplifier performance as a function of bias conditions without passive components. figure 8 testing circuit for frequencies from 150 mhz to 10 ghz %ldv7 %ldv7 %*%/(6'whvwlqjflufxlw 5) lq 9 && $gm 5) rxw 9 %ldv 9 &wuo ,q *1' 7rs9lhz 9 & , & 9 %
BGB707L7ESD electrical characteristics data sheet 18 revision 3.2, 2010-06-30 table 9 ac characteristics v c =3v, f =150 mhz parameter symbol values unit note / test condition min. typ. max. minimum noise figure nf min db z s = z sopt ?0.4? i c =2.1ma ?0.4? i c =3ma ?0.5? i c =6ma ?0.55? i c =10ma transducer gain | s 21 |2 db z s = z l =50 ? ?17? i c =2.1ma ?19? i c =3ma ?24? i c =6ma ?27? i c =10ma maximum power gain g ms db z l = z lopt , z s = z sopt ?31.5? i c =2.1ma ?33? i c =3ma ?35? i c =6ma ?37? i c =10ma output 1 db compression point 1) 1) op 1db is the output compression point achieved in a 50 ? application circuit according to figure 2 using the integrated biasing. op 1db dbm ?3.5? i cq =2.1ma, i ccomp =11ma 2) 2) i cq is the quiescent current at small input power levels. i cq increases up to i ccomp as rf input power approaches ip 1db , cf. figure 15 . ?4? i cq =3ma, i ccomp =11ma ?4.5? i cq =6ma, i ccomp =11ma ?3? i cq =10ma, i ccomp =11ma output 3 rd order intercept point oip 3 dbm ?2? i c =2.1ma ?6? i c =3ma ?14.5? i c =6ma ?19.5? i c =10ma
BGB707L7ESD electrical characteristics data sheet 19 revision 3.2, 2010-06-30 table 10 ac characteristics v c =3v, f =450 mhz parameter symbol values unit note / test condition min. typ. max. minimum noise figure nf min db z s = z sopt ?0.45? i c =2.1ma ?0.45? i c =3ma ?0.5? i c =6ma ?0.6? i c =10ma transducer gain | s 21 |2 db z s = z l =50 ? ?17? i c =2.1ma ?19? i c =3ma ?24? i c =6ma ?27? i c =10ma maximum power gain g ms db z l = z lopt , z s = z sopt ?27? i c =2.1ma ?28? i c =3ma ?30.5? i c =6ma ?32? i c =10ma output 1 db compression point 1) 1) op 1db is the output compression point achieved in a 50 ? application circuit according to figure 2 using the integrated biasing. op 1db dbm ?11.5? i cq =2.1ma, i ccomp =11ma 2) 2) i cq is the quiescent current at small input power levels. i cq increases up to i ccomp as rf input power approaches ip 1db , cf. figure 15 . ?12? i cq =3ma, i ccomp =14ma ?11.5? i cq =6ma, i ccomp =16ma ?9.5? i cq =10ma, i ccomp =15ma output 3 rd order intercept point oip 3 dbm ?2? i c =2.1ma ?5.5? i c =3ma ?14? i c =6ma ?19.5? i c =10ma
BGB707L7ESD electrical characteristics data sheet 20 revision 3.2, 2010-06-30 table 11 ac characteristics v c =3v, f =900 mhz parameter symbol values unit note / test condition min. typ. max. minimum noise figure nf min db z s = z sopt ?0.55? i c =2.1ma ?0.55? i c =3ma ?0.6? i c =6ma ?0.7? i c =10ma transducer gain | s 21 |2 db z s = z l =50 ? ?17? i c =2.1ma ?19? i c =3ma ?23.5? i c =6ma ?26? i c =10ma maximum power gain g ms db z l = z lopt , z s = z sopt ?24? i c =2.1ma ?25? i c =3ma ?27.5? i c =6ma ?29? i c =10ma output 1 db compression point 1) 1) op 1db is the output compression point achieved in a 50 ? application circuit according to figure 2 using the integrated biasing. op 1db dbm ?11? i cq =2.1ma, i ccomp =13ma 2) 2) i cq is the quiescent current at small input power levels. i cq increases up to i ccomp as rf input power approaches ip 1db , cf. figure 15 . ?11? i cq =3ma, i ccomp =15ma ?10? i cq =6ma, i ccomp =14ma ?8.5? i cq =10ma, i ccomp =14ma output 3 rd order intercept point oip 3 dbm ?3.5? i c =2.1ma ?8? i c =3ma ?17? i c =6ma ?19.5? i c =10ma
BGB707L7ESD electrical characteristics data sheet 21 revision 3.2, 2010-06-30 table 12 ac characteristics v c =3v, f = 1.5 ghz parameter symbol values unit note / test condition min. typ. max. minimum noise figure nf min db z s = z sopt ?0.6? i c =2.1ma ?0.6? i c =3ma ?0.6? i c =6ma ?0.7? i c =10ma transducer gain | s 21 |2 db z s = z l =50 ? ?16? i c =2.1ma ?18.5? i c =3ma ?22.5? i c =6ma ?24.5? i c =10ma maximum power gain g ms db z l = z lopt , z s = z sopt ?21.5? i c =2.1ma ?23? i c =3ma ?25.5? i c =6ma ?27? i c =10ma output 1 db compression point 1) 1) op 1db is the output compression point achieved in a 50 ? application circuit according to figure 2 using the integrated biasing. op 1db dbm ?10.5? i cq =2.1ma, i ccomp =14ma 2) 2) i cq is the quiescent current at small input power levels. i cq increases up to i ccomp as rf input power approaches ip 1db , cf. figure 15 . ?10? i cq =3ma, i ccomp =16ma ?9? i cq =6ma, i ccomp =15ma ?8? i cq =10ma, i ccomp =15ma output 3 rd order intercept point oip 3 dbm ?3.5? i c =2.1ma ?8? i c =3ma ?17? i c =6ma ?19.5? i c =10ma
BGB707L7ESD electrical characteristics data sheet 22 revision 3.2, 2010-06-30 table 13 ac characteristics v c =3v, f = 1.9 ghz parameter symbol values unit note / test condition min. typ. max. minimum noise figure nf min db z s = z sopt ?0.6? i c =2.1ma ?0.6? i c =3ma ?0.6? i c =6ma ?0.7? i c =10ma transducer gain | s 21 |2 db z s = z l =50 ? ?16? i c =2.1ma ?18? i c =3ma ?21.5? i c =6ma ?23? i c =10ma maximum power gain g ms db z l = z lopt , z s = z sopt ?21? i c =2.1ma ?22? i c =3ma ?24? i c =6ma ?26? i c =10ma output 1 db compression point 1) 1) op 1db is the output compression point achieved in a 50 ? application circuit according to figure 2 using the integrated biasing. op 1db dbm ?10? i cq =2.1ma, i ccomp =15ma 2) 2) i cq is the quiescent current at small input power levels. i cq increases up to i ccomp as rf input power approaches ip 1db , cf. figure 15 . ?10? i cq =3ma, i ccomp =16ma ?8.5? i cq =6ma, i ccomp =14ma ?8? i cq =10ma, i ccomp =14ma output 3 rd order intercept point oip 3 dbm ?3.5? i c =2.1ma ?7.5? i c =3ma ?17? i c =6ma ?19.5? i c =10ma
BGB707L7ESD electrical characteristics data sheet 23 revision 3.2, 2010-06-30 table 14 ac characteristics v c =3v, f = 2.4 ghz parameter symbol values unit note / test condition min. typ. max. minimum noise figure nf min db z s = z sopt ?0.65? i c =2.1ma ?0.6? i c =3ma ?0.6? i c =6ma ?0.7? i c =10ma transducer gain | s 21 |2 db z s = z l =50 ? ?15.5? i c =2.1ma ?17? i c =3ma ?20? i c =6ma ?21.5? i c =10ma maximum power gain g ms db z l = z lopt , z s = z sopt ?20? i c =2.1ma ?21? i c =3ma ?23? i c =6ma ?25? i c =10ma output 1 db compression point 1) 1) op 1db is the output compression point achieved in a 50 ? application circuit according to figure 2 using the integrated biasing. op 1db dbm ?10? i cq =2.1ma, i ccomp =15ma 2) 2) i cq is the quiescent current at small input power levels. i cq increases up to i ccomp as rf input power approaches ip 1db , cf. figure 15 . ?10? i cq =3ma, i ccomp =16ma ?9? i cq =6ma, i ccomp =14ma ?8? i cq =10ma, i ccomp =14ma output 3 rd order intercept point oip 3 dbm ?4.5? i c =2.1ma ?9? i c =3ma ?17.5? i c =6ma ?19.5? i c =10ma
BGB707L7ESD electrical characteristics data sheet 24 revision 3.2, 2010-06-30 table 15 ac characteristics v c =3v, f = 3.5 ghz parameter symbol values unit note / test condition min. typ. max. minimum noise figure nf min db z s = z sopt ?0.8? i c =2.1ma ?0.75? i c =3ma ?0.7? i c =6ma ?0.75? i c =10ma transducer gain | s 21 |2 db z s = z l =50 ? ?13.5? i c =2.1ma ?15.5? i c =3ma ?18? i c =6ma ?19? i c =10ma maximum power gain g ms db z l = z lopt , z s = z sopt ?18.5? i c =2.1ma ?20? i c =3ma ?22? i c =6ma ?23.5? i c =10ma output 1 db compression point 1) 1) op 1db is the output compression point achieved in a 50 ? application circuit according to figure 2 using the integrated biasing. op 1db dbm ?10? i cq =2.1ma, i ccomp =16ma 2) 2) i cq is the quiescent current at small input power levels. i cq increases up to i ccomp as rf input power approaches ip 1db , cf. figure 15 . ?10? i cq =3ma, i ccomp =16ma ?9? i cq =6ma, i ccomp =15ma ?8? i cq =10ma, i ccomp =15ma output 3 rd order intercept point oip 3 dbm ?5.5? i c =2.1ma ?12? i c =3ma ?17.5? i c =6ma ?19? i c =10ma
BGB707L7ESD electrical characteristics data sheet 25 revision 3.2, 2010-06-30 table 16 ac characteristics v c =3v, f = 5.5 ghz parameter symbol values unit note / test condition min. typ. max. minimum noise figure nf min db z s = z sopt ?1.05? i c =2.1ma ?1? i c =3ma ?0.9? i c =6ma ?0.95? i c =10ma transducer gain | s 21 |2 db z s = z l =50 ? ?11.5? i c =2.1ma ?13? i c =3ma ?15? i c =6ma ?15.5? i c =10ma maximum power gain g ms db z l = z lopt , z s = z sopt ?17.5? i c =2.1ma ?18.5? i c =3ma ?20? i c =6ma ?19? i c =10ma output 1 db compression point 1) 1) op 1db is the output compression point achieved in a 50 ? application circuit according to figure 2 using the integrated biasing. op 1db dbm ?10.5? i cq =2.1ma, i ccomp =17ma 2) 2) i cq is the quiescent current at small input power levels. i cq increases up to i ccomp as rf input power approaches ip 1db , cf. figure 15 . ?10? i cq =3ma, i ccomp =17ma ?9? i cq =6ma, i ccomp =15ma ?8? i cq =10ma, i ccomp =15ma output 3 rd order intercept point oip 3 dbm ?6.5? i c =2.1ma ?12? i c =3ma ?22? i c =6ma ?21? i c =10ma
BGB707L7ESD electrical characteristics data sheet 26 revision 3.2, 2010-06-30 table 17 ac characteristics v c =3v, f =10 ghz parameter symbol values unit note / test condition min. typ. max. minimum noise figure nf min db z s = z sopt ?2? i c =2.1ma ?1.8? i c =3ma ?1.5? i c =6ma ?1.5? i c =10ma transducer gain | s 21 |2 db z s = z l =50 ? ?5.5? i c =2.1ma ?7? i c =3ma ?9? i c =6ma ?10? i c =10ma maximum power gain g ms db z l = z lopt , z s = z sopt ?14.5? i c =2.1ma ?15? i c =3ma ?15.5? i c =6ma ?15.5? i c =10ma output 1 db compression point 1) 1) op 1db is the output compression point achieved in a 50 ? application circuit according to figure 2 using the integrated biasing. op 1db dbm ?6? i cq =2.1ma, i ccomp =16ma 2) 2) i cq is the quiescent current at small input power levels. i cq increases up to i ccomp as rf input power approaches ip 1db , cf. figure 15 . ?6? i cq =3ma, i ccomp =16ma ?4? i cq =6ma, i ccomp =15ma ?4? i cq =10ma, i ccomp =15ma output 3 rd order intercept point oip 3 dbm ?2.5? i c =2.1ma ?7? i c =3ma ?19.5? i c =6ma ?18? i c =10ma
BGB707L7ESD electrical characteristics data sheet 27 revision 3.2, 2010-06-30 6.3.4 typical ac ch aracteristic curves the measurement setup is the same as described in figure 8 except for figure 15 where compression is measured in a 50 ohm application circuit according to figure 2 using the integrated biasing; v c =3v , t a =25c. figure 9 s 11 as a function of frequency, i c as parameter figure 10 s 22 as a function of frequency, i c as parameter 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 0.03 to 10 ghz step: 1 ghz 2.1 ma 3.0 ma 6.0 ma 10 ma 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 0.03 to 10 ghz step: 1 ghz 2.1 ma 3.0 ma 6.0 ma 10 ma
BGB707L7ESD electrical characteristics data sheet 28 revision 3.2, 2010-06-30 figure 11 transition frequency as a function of i c , v c as parameter figure 12 optimum source impedance for minimum nf as a function of frequency, i c as parameter 0 5 10 15 20 25 30 15 20 25 30 35 40 45 i c [ma] f t [ghz] 4.00v 3.00v 1.80v 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 0.15ghz 0.45ghz 0.9ghz 1.5ghz 1.9ghz 2.4ghz 3.5ghz 5.5ghz 10ghz i c = 2.1ma i c = 3.0ma i c = 6.0ma i c = 10ma
BGB707L7ESD electrical characteristics data sheet 29 revision 3.2, 2010-06-30 figure 13 maximum power gain as a function of i c , frequency as parameter figure 14 power gain as a function of i c , frequency as parameter 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 9 12 15 18 21 24 27 30 33 36 39 42 i c [ma] g max [db] 10.00ghz 5.50ghz 3.50ghz 2.40ghz 1.90ghz 1.50ghz 0.90ghz 0.45ghz 0.15ghz 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 3 6 9 12 15 18 21 24 27 30 33 36 i c [ma] s 21 [db] 10.00ghz 5.50ghz 3.50ghz 2.40ghz 1.90ghz 1.50ghz 0.90ghz 0.45ghz 0.15ghz
BGB707L7ESD electrical characteristics data sheet 30 revision 3.2, 2010-06-30 figure 15 power gain and total supply current as a function of rf input power at 3.5 ghz figure 16 output 3 rd order intercept point as a function of i c at 3.5 ghz, v c as parameter 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 -40 -37.5 -35 -32.5 -30 -27.5 -25 -22.5 -20 -17.5 -15 -12.5 -10 -7.5 -5 -2.5 0 input power [dbm] gain [db] 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 current [ma] gain , icq = 2.1ma gain , icq = 10ma icc , icq = 2.1ma icc , icq = 10ma p1db, 2.1ma p1db, 10ma 0 1 2 3 4 5 6 7 8 9 10 11 12 4 6 8 10 12 14 16 18 20 22 i c [ma] oip 3 [dbm] 1.8v 3v 4v
BGB707L7ESD package information data sheet 31 revision 3.2, 2010-06-30 7 package information figure 17 package outline tslp-7-1 figure 18 footprint figure 19 marking layout (top view) figure 20 tape dimensions 0.05 max. +0.1 0.4 1) dimension applies to plated terminal 0.035 1.2 0.05 1 0.05 1.3 0.05 1.7 0.05 2 6 x 0.2 0.035 1) 6 x 0.2 0.035 1) 0.035 1.1 1) 456 1 2 3 7 1) top view bottom view pin 1 marking tslp-7-1-po v04 0.25 1.4 1.9 0.25 0.2 0.25 0.25 0.2 1.4 1.9 0.3 0.3 0.3 0.2 0.2 0.2 0.2 0.2 stencil apertures copper solder mask r0.1 0.25 1.4 1.9 0.25 0.2 0.25 0.25 0.2 1.4 1.9 0.3 0.3 0.3 0.2 0.2 0.2 0.2 0.2 stencil apertures copper solder mask r0.1 smd nsmd tslp-7-1-fp v01 ax az BGB707L7ESD type code tslp-7-1-tp v0 3 1.45 4 8 2.18 0.5 pin 1 marking
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